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MX29LV640MT

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure - 8KB (4KW) x 8 and 64KB(32KW) x 127 • Sector Protection/Chip Unprotect - Provides sector group pro

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MCNIX

????????????旺宏电子

64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:502.19 Kbytes Page:69 Pages

MCNIX

????????????旺宏电子

64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control

GENERAL DESCRIPTION The Am29LV640DU/Am29LV641DU is a 64 Mbit, 3.0 Volt (3.0 V to 3.6 V) single power supply flash memory devices organized as 4,194,304 words. Data appears on DQ0-DQ15. The device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 volt VPP

AMD

超威半导体

64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with

文件:1.17317 Mbytes Page:58 Pages

AMD

超威半导体

64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory

文件:522.929 Kbytes Page:46 Pages

EON

宜扬科技

更新时间:2026-5-13 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MXIC
2016+
TSSOP
6000
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MX
23+
TSOP48
20000
全新原装假一赔十
MX
24+
TSSOP
20000
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MXIC
12+
TSOP
41
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MX
0537+
TSOP48
2255
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MXIC
2025+
TSOP
3783
全新原装、公司现货热卖
MXIC/旺宏
25+
TSOP
73200
全新原装现货特价销售,欢迎来电查询
MX
25+
TSOP
4500
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MXIC/旺宏
22+
TSOP48
12245
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MXIC
TSOP
68500
一级代理 原装正品假一罚十价格优势长期供货

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