RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistors

封装/外壳：TO-270AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 68V 960MHZ TO270-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：730.91 Kbytes Page：20 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：730.91 Kbytes Page：20 Pages

RF Power Field Effect Transistors