MW6价格

参考价格:¥118.4656

型号:MW6288UK 品牌:MULTICOMP 备注:这里有MW6多少钱,2024年最近7天走势,今日出价,今日竞价,MW6批发/采购报价,MW6行情走势销售排行榜,MW6报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MW6

Microwave Switching, Hermetically Sealed, DPDT

文件:299.63 Kbytes Page:8 Pages

MACOM

Tyco Electronics

MACOM

USB 2.0 FLASH DISK CONTROLLER

FEATURS ■USB2.0Interfacecompatiblewith MassStorageDeviceClass -IntegratedUSB2.0PHY -SupportsUSBHighSpeedandFullSpeed -SuspendandResumeoperations ■MostWidelyFLASHSupport -SupportsalltypeofNANDFlashdevices ST,Hynix,Samsung,Toshiba,Micron, InfineonandR

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

1-2000MHz,4W,28VLATERALN-CHANNELRFPOWERMOSFET DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto2000MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@1960MHz,28Volts,IDQ=50mA

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformanceat960MHz:VDD=2

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformanceat960MHz:VDD=2

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Power Field Effect Transistor

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors

450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformanceat960MHz:VDD=2

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SSPA Replacement Kits

文件:171.2 Kbytes Page:1 Pages

MIMIX

Mimix Broadband

MIMIX

SSPA Replacement Kits

文件:171.2 Kbytes Page:1 Pages

MIMIX

Mimix Broadband

MIMIX

包装:散装 描述:RELAY RF 12A 6GHZ HIGH FREQ 继电器 高频(RF)继电器

TE Connectivity Aerospace, Defense and Marine

TE Connectivity Aerospace, Defense and Marine

TE Connectivity Aerospace, Defense and Marine

包装:散装 描述:RELAY RF DPDT 1A 12V 继电器 高频(RF)继电器

TE Connectivity Aerospace, Defense and Marine

TE Connectivity Aerospace, Defense and Marine

TE Connectivity Aerospace, Defense and Marine

Wide frequency range : [ 200.01 MHz ~ 800.0 MHz ]

文件:98.68 Kbytes Page:1 Pages

MERCURYMERCURY electronics IND co ltd

玛居礼玛居礼电波工业股份有限公司

MERCURY

Microwave Switching, Hermetically Sealed, DPDT

文件:299.63 Kbytes Page:8 Pages

MACOM

Tyco Electronics

MACOM

RF LDMOS Wideband Integrated Power Amplifier

文件:852.88 Kbytes Page:17 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifier

文件:852.88 Kbytes Page:17 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifier

文件:852.88 Kbytes Page:17 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifier

文件:836.9 Kbytes Page:17 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:1.11794 Mbytes Page:28 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:1.12317 Mbytes Page:28 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:1.22311 Mbytes Page:28 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF LDMOS Wideband Integrated Power Amplifiers

文件:1.22311 Mbytes Page:28 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF LDMOS Wideband Integrated Power Amplifiers

文件:1.11794 Mbytes Page:28 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:1.12317 Mbytes Page:28 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:1.22311 Mbytes Page:28 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF LDMOS Wideband Integrated Power Amplifiers

文件:1.12317 Mbytes Page:28 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:485.59 Kbytes Page:16 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:989.74 Kbytes Page:22 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF LDMOS Wideband Integrated Power Amplifiers

文件:485.59 Kbytes Page:16 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:989.74 Kbytes Page:22 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF LDMOS Wideband Integrated Power Amplifiers

文件:485.59 Kbytes Page:16 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Wideband Integrated Power Amplifiers

文件:989.74 Kbytes Page:22 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF LDMOS Integrated Power Amplifier

文件:726.22 Kbytes Page:12 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF LDMOS Integrated Power Amplifier

文件:489.63 Kbytes Page:12 Pages

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飞思卡尔

freescale

RF LDMOS Integrated Power Amplifier

文件:494 Kbytes Page:12 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF LDMOS Integrated Power Amplifier

文件:726.22 Kbytes Page:12 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF LDMOS Integrated Power Amplifier

文件:494 Kbytes Page:12 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor

文件:550.65 Kbytes Page:13 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Power Field Effect Transistor

文件:496.37 Kbytes Page:13 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistor

文件:550.65 Kbytes Page:13 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Power Field Effect Transistor

文件:496.37 Kbytes Page:13 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:730.91 Kbytes Page:20 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:730.91 Kbytes Page:20 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:730.91 Kbytes Page:20 Pages

freescaleFreescaleiscreatingasmarter

飞思卡尔

freescale

MW6产品属性

  • 类型

    描述

  • 型号

    MW6

  • 制造商

    MA-COM

  • 制造商全称

    M/A-COM Technology Solutions, Inc.

  • 功能描述

    Microwave Switching, Hermetically Sealed, DPDT

更新时间:2024-5-28 19:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP USA Inc.
24+
TO-270BA
30000
晶体管-分立半导体产品-原装正品
freescal
22+
SMD
7410
绝对原装现货,价格低,欢迎询购!
FREESCALE
1321+ROHS全新
模块优势热卖
3123
原装现货在线咨询样品※技术支持专业电子元器件授权
21+
SOT-223
8560
优势代理渠道,原装正品,可全系列订货开增值税票
MatrixOpto(矩阵)
23+
SOT4
6000
诚信服务,绝对原装原盘
NSC
1912+
SMD
16850
绝对原装现货
Freescale(飞思卡尔)
2023+
N/A
4550
全新原装正品
FREESCALE
22+
TO-272
10000
原装正品优势供应
FREESCA
21+
VQFN
9800
只做原装正品假一赔十!正规渠道订货!
23+
SOP
244
现货供应

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