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MW6价格
参考价格:¥118.4656
型号:MW6288UK 品牌:MULTICOMP 备注:这里有MW6多少钱,2024年最近7天走势,今日出价,今日竞价,MW6批发/采购报价,MW6行情走势销售排行榜,MW6报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MW6 | Microwave Switching, Hermetically Sealed, DPDT 文件:299.63 Kbytes Page:8 Pages | MACOM Tyco Electronics | ||
USB 2.0 FLASH DISK CONTROLLER FEATURS ■USB2.0Interfacecompatiblewith MassStorageDeviceClass -IntegratedUSB2.0PHY -SupportsUSBHighSpeedandFullSpeed -SuspendandResumeoperations ■MostWidelyFLASHSupport -SupportsalltypeofNANDFlashdevices ST,Hynix,Samsung,Toshiba,Micron, InfineonandR | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 1-2000MHz,4W,28VLATERALN-CHANNELRFPOWERMOSFET DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto2000MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@1960MHz,28Volts,IDQ=50mA | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformanceat960MHz:VDD=2 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Power Field Effect Transistor 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformanceat960MHz:VDD=2 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Power Field Effect Transistor 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformance@960MHz,VDD=28 | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors 450-1500MHz,10W,28VLATERALN-CHANNELBROADBANDRFPOWERMOSFETs DesignedforClassAorClassABbasestationapplicationswithfrequenciesupto1500MHz.Suitableforanaloganddigitalmodulationandmulticarrieramplifierapplications. •TypicalTwo-TonePerformanceat960MHz:VDD=2 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SSPA Replacement Kits 文件:171.2 Kbytes Page:1 Pages | MIMIX Mimix Broadband | |||
SSPA Replacement Kits 文件:171.2 Kbytes Page:1 Pages | MIMIX Mimix Broadband | |||
包装:散装 描述:RELAY RF 12A 6GHZ HIGH FREQ 继电器 高频(RF)继电器 | TE Connectivity Aerospace, Defense and Marine TE Connectivity Aerospace, Defense and Marine | |||
包装:散装 描述:RELAY RF DPDT 1A 12V 继电器 高频(RF)继电器 | TE Connectivity Aerospace, Defense and Marine TE Connectivity Aerospace, Defense and Marine | |||
Wide frequency range : [ 200.01 MHz ~ 800.0 MHz ] 文件:98.68 Kbytes Page:1 Pages | MERCURYMERCURY electronics IND co ltd 玛居礼玛居礼电波工业股份有限公司 | |||
Microwave Switching, Hermetically Sealed, DPDT 文件:299.63 Kbytes Page:8 Pages | MACOM Tyco Electronics | |||
RF LDMOS Wideband Integrated Power Amplifier 文件:852.88 Kbytes Page:17 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifier 文件:852.88 Kbytes Page:17 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifier 文件:852.88 Kbytes Page:17 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifier 文件:836.9 Kbytes Page:17 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:1.11794 Mbytes Page:28 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:1.12317 Mbytes Page:28 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:1.22311 Mbytes Page:28 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:1.22311 Mbytes Page:28 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:1.11794 Mbytes Page:28 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:1.12317 Mbytes Page:28 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:1.22311 Mbytes Page:28 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:1.12317 Mbytes Page:28 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:485.59 Kbytes Page:16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:989.74 Kbytes Page:22 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:485.59 Kbytes Page:16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:989.74 Kbytes Page:22 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:485.59 Kbytes Page:16 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Wideband Integrated Power Amplifiers 文件:989.74 Kbytes Page:22 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF LDMOS Integrated Power Amplifier 文件:726.22 Kbytes Page:12 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF LDMOS Integrated Power Amplifier 文件:489.63 Kbytes Page:12 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Integrated Power Amplifier 文件:494 Kbytes Page:12 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF LDMOS Integrated Power Amplifier 文件:726.22 Kbytes Page:12 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF LDMOS Integrated Power Amplifier 文件:494 Kbytes Page:12 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor 文件:550.65 Kbytes Page:13 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Power Field Effect Transistor 文件:496.37 Kbytes Page:13 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistor 文件:550.65 Kbytes Page:13 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Power Field Effect Transistor 文件:496.37 Kbytes Page:13 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件:730.91 Kbytes Page:20 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件:730.91 Kbytes Page:20 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 | |||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 文件:730.91 Kbytes Page:20 Pages | freescaleFreescaleiscreatingasmarter 飞思卡尔 |
MW6产品属性
- 类型
描述
- 型号
MW6
- 制造商
MA-COM
- 制造商全称
M/A-COM Technology Solutions, Inc.
- 功能描述
Microwave Switching, Hermetically Sealed, DPDT
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP USA Inc. |
24+ |
TO-270BA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
freescal |
22+ |
SMD |
7410 |
绝对原装现货,价格低,欢迎询购! |
|||
FREESCALE |
1321+ROHS全新 |
模块优势热卖 |
3123 |
原装现货在线咨询样品※技术支持专业电子元器件授权 |
|||
21+ |
SOT-223 |
8560 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
MatrixOpto(矩阵) |
23+ |
SOT4 |
6000 |
诚信服务,绝对原装原盘 |
|||
NSC |
1912+ |
SMD |
16850 |
绝对原装现货 |
|||
Freescale(飞思卡尔) |
2023+ |
N/A |
4550 |
全新原装正品 |
|||
FREESCALE |
22+ |
TO-272 |
10000 |
原装正品优势供应 |
|||
FREESCA |
21+ |
VQFN |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
23+ |
SOP |
244 |
现货供应 |
MW6规格书下载地址
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MW6数据表相关新闻
MVR1261C-112ML
MVR1261C-112ML
2023-12-15MWCT1014SFVLLR
MWCT1014SFVLLR
2023-11-8MWCT1001AVLH
全新原装现货支持第三方机构验证
2023-2-2MV15-110V-CU
优势渠道
2023-1-30MV15-110V-CU-ROHS
优势渠道
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深圳市大唐盛世半导体有限公司手机:17727572380。电话:0755-83226739QQ:626839837。微信号:15096137729
2019-12-4
DdatasheetPDF页码索引
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