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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MVGSF1N03LT1G | PowerMOSFET PowerMOSFET30V,2.1A,SingleN−Channel,SOT−23 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry.Typicalapplicationsaredc−dcconvertersandpowermanagementinp | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
MVGSF1N03LT1G | PowerMOSFET30V,2.1A,SingleN?묬hannel,SOT??3 文件：124.39 Kbytes Page：5 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | |
N-CHANNELENHANCEMENT-MODETMOSMOSFET TheseminiaturesurfacemountMOSFETsutilizeMotorola’sHighCellDensity,HDTMOSprocess.LowrDS(on)assuresminimalpowerlossandconservesenergy,makingthisdeviceidealforuseinspacesensitivepowermanagementcircuitry.Typicalapplicationsaredc–dcconvertersandpowermanagementin | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  | | |
PowerMOSFET30V,2.1A,SingleN?묬hannel,SOT??3 PowerMOSFET30V,2.1A,SingleN−Channel,SOT−23 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry.Typicalapplicationsaredc−dcconvertersandpowermanagementinp | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PowerMOSFET PowerMOSFET30V,2.1A,SingleN−Channel,SOT−23 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry.Typicalapplicationsaredc−dcconvertersandpowermanagementinp | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
PowerMOSFET30V,2.1A,SingleN?묬hannel,SOT??3 文件：124.39 Kbytes Page：5 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | |
MVGSF1N03LT1G产品属性
- 类型
描述
- 型号
MVGSF1N03LT1G
- 功能描述
MOSFET NFET 30V 1.6A 0.100
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
24+ |
NA/ |
9000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
24+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
25+ |
SOT-23 |
37405 |
ON/安森美全新特价MVGSF1N03LT1G即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
24+ |
SOT-23 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原装，正品 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
23+ |
SOT-23 |
11978 |
公司只做原装正品,假一赔十 |
|||
ON |
SOT23 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON/安森美 |
20+ |
SOT-23 |
12763 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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DdatasheetPDF页码索引
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