GaAs Varactor Diodes Hyperabrupt

文件：189.63 Kbytes Page：4 Pages

封装/外壳：模具 包装：托盘 描述：GAAS TVAR NON HERMETIC EPSM SMT 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB32005X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. FEATURES INCLUDE: • Diffused Emitter Ballasting Resistor • Hermetic Flange Package • Gold Metelization

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

Duplex Multimode 62.5-125 Fiber Patch Cable (LC-LC), 5M (16-ft.)

文件：490.97 Kbytes Page：2 Pages

Duplex Multimode 62.5-125 Fiber Patch Cable

文件：479.04 Kbytes Page：2 Pages