GaAs Varactor Diodes Hyperabrupt

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封装/外壳：模具 包装：托盘 描述：GAAS TVAR NON HERMETIC EPSM SMT 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB32005X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. FEATURES INCLUDE: • Diffused Emitter Ballasting Resistor • Hermetic Flange Package • Gold Metelization

Duplex Multimode 62.5-125 Fiber Patch Cable

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Miniature Power PCB RY II & RY II reflow-solderable

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