位置:首页 > IC中文资料第11339页 > MV21006
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MV21006 | GaAs Varactor Diodes Abrupt Junction Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie | MICROSEMI 美高森美 | ||
MV21006 | Varactors (Packaged and Die form) Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwa | MICROCHIP 微芯科技 | ||
ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac | NAIS 松下电器 | |||
INTEGRATED CIRCUITS [SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs) | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY 文件:115.49 Kbytes Page:4 Pages | NAIS 松下电器 | |||
HIGH SENSITIVITY RELAY WITH GUARANTEED LOW LEVEL SWITCHING CAPACITY 文件:95.81 Kbytes Page:5 Pages | NAIS 松下电器 |
MV21006产品属性
- 类型
描述
- 型号
MV21006
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
GaAs Varactor Diodes Abrupt Junction
MV21006规格书下载地址
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