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MV21006

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

MICROSEMI

美高森美

MV21006

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition.  The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves.  The diodes are available in a variety of microwa

MICROCHIP

微芯科技

ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY

FEATURES • Compact slim body saves space Thanks to the small surface area of 5.7 mm × 10.6 mm .224 inch × .417 inch and low height of 9.0 mm .354 inch, the pack aging density can be increased to allow for much smaller designs. • Outstanding surge resistance. Surge withstand between open contac

NAIS

松下电器

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

ETCList of Unclassifed Manufacturers

未分类制造商

ULTRA-SMALL PACKAGE FLAT POLARIZED RELAY

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NAIS

松下电器

HIGH SENSITIVITY RELAY WITH GUARANTEED LOW LEVEL SWITCHING CAPACITY

文件:95.81 Kbytes Page:5 Pages

NAIS

松下电器

MV21006产品属性

  • 类型

    描述

  • 型号

    MV21006

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    GaAs Varactor Diodes Abrupt Junction

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