GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition.  The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves.  The diodes are available in a variety of microwa

封装/外壳：2-SMD，扁平引线 包装：托盘 描述：GAAS TVAR NON HERMETIC MICROSTRI 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

封装/外壳：模具 包装：托盘 描述：GAAS TVAR NON HERMETIC EPSM SMT 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

1-pole/2-pole 16A polarized power relays Variety of contact arrangements

FEATURES 1. Variety of contact arrangements Wide lineup of 1 Form C, 1 Form A, 1 Form B, 2 Form C, 2 Form A, 2 Form B, 1 Form A 1 Form B. 2. Latching operation Latching via a polarized magnetic circuit structure allows remote operation and lower energy consumption 3. Compact with high c

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

Suitable for lighting and motor load, 1 Form A 50A latching relays

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