GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave

封装/外壳：模具 包装：托盘 描述：GAAS TVAR NON HERMETIC MICROSTRI 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

Schottky ORing PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● 200 Amperes/10 to 15 Volts ● 150°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

2.00mm PITCH CONNECTOR

文件：214.4 Kbytes Page：1 Pages

2.00mm PITCH CONNECTOR

文件：232.76 Kbytes Page：1 Pages

ULTRA FAST RECOVERY MODULES

文件：231.22 Kbytes Page：4 Pages