GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a variety of microwave

30 Watts, 935-960 MHz Cellular Radio RF Power Transistor

Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

SCR Trigger and Control Transformers

文件：33.96 Kbytes Page：1 Pages

SENDUST TOROIDAL POWER INDUCTORS

文件：169.37 Kbytes Page：4 Pages

LOW COST TOROIDAL POWER INDUCTORS

文件：43.55 Kbytes Page：2 Pages