MURS360BT3G价格

参考价格:¥0.7942

型号:MURS360BT3G 品牌:ONSemi 备注:这里有MURS360BT3G多少钱,2026年最近7天走势,今日出价,今日竞价,MURS360BT3G批发/采购报价,MURS360BT3G行情走势销售排行榜,MURS360BT3G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MURS360BT3G

Ultra-fast Rectifiers

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features  Small Compact Surface Mountable Package with J−Bend Leads  Rectangular Package for Autom

ONSEMI

安森美半导体

MURS360BT3G

封装/外壳:DO-214AA,SMB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GEN PURP 600V 3A SMB 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

MURS360BT3G

600 V, 3.0 A Ultrafast Rectifier

ONSEMI

安森美半导体

MURS360BT3G

Surface Mount Ultrafast Power Rectifiers

文件:98.32 Kbytes Page:5 Pages

ONSEMI

安森美半导体

MURS360BT3G

Surface Mount Ultrafast Power Rectifiers

文件:96.26 Kbytes Page:5 Pages

ONSEMI

安森美半导体

MURS360BT3G

Surface Mount Ultrafast Power Rectifiers

文件:105.01 Kbytes Page:5 Pages

ONSEMI

安森美半导体

MURS360BT3G

Surface Mount Ultrafast Power Rectifiers

文件:65.33 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Surface Mount Ultrafast Power Rectifiers

文件:98.32 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Surface Mount Ultrafast Power Rectifiers

文件:65.33 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件:117.32 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MURS360BT3G产品属性

  • 类型

    描述

  • 型号

    MURS360BT3G

  • 功能描述

    整流器 3A 600V UFR RECTIFIER

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 产品

    Standard Recovery Rectifiers

  • 反向电压

    100 V

  • 恢复时间

    1.2 us

  • 正向连续电流

    2 A

  • 最大浪涌电流

    35 A 反向电流

  • IR

    5 uA

  • 安装风格

    SMD/SMT

  • 封装/箱体

    DO-221AC

  • 封装

    Reel

更新时间:2026-1-4 13:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
SMB
12771
原装正品,现货库存,1小时内发货
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
ON
16+
SMBDO-214AA
10000
进口原装现货/价格优势!
ON(安森美)
23+
25900
新到现货,只有原装
ON/安森美
23+
SMB
11994
全新原装正品现货可开票
ON(安森美)
2511
SMB
2455
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
ON
24+
SMB
30000
只做原装 有挂有货 假一赔十
ON/安森美
2025+
SMBDO-214AA
5000
原装进口价格优 请找坤融电子!
ON
25+
SMB
6000
全新原装现货、诚信经营!
ONSEMI/安森美
25+
SMB
32000
ONSEMI/安森美全新特价MURS360BT3G即刻询购立享优惠#长期有货

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