Surface Mount Ultrafast Power Rectifiers

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features •Small Compact Surface Mountable Package with J−Bend Leads •Rectangular Package for A

丝印代码：U1G；Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V

Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) • NRVUS and SURS8 Prefixes for Automotive and Other Applications

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 400V 1A SMB 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Ultrafast Power Rectifiers Diodes

Surface Mount Ultrafast Power Rectifiers

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Surface Mount Ultrafast Power Rectifiers

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ULTRAFAST RECTIFIERS 1.0 AMPERE, 50??00 VOLTS

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Surface Mount Ultrafast Power Rectifiers

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Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low v

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarit

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS POWERMITE®Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packagin

Surface Mount Schottky Power Rectifier

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity pr