丝印代码：MUR840F；Ultra-Fast Recovery Diodes 8A FRED Pt MUR840F

Features Adopt FRED chip Low forward Voltage drop Fast reverse recovery time High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability

丝印代码：MUR840F；Ultra-Fast Recovery Diodes 8A FRED

Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

丝印代码：MUR840F；Ultra-Fast Recovery Diodes 8A FRED

Features Adopt FRED chip Low forward Voltage drop Fast reverse recovery time High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Typical Applications

Ultra Fast Rectifiers

Features ◇ Low cost ◇ Diffused junction ◇ Glass passivated junction ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with Alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

HIGH EFFICIENCY RECTIFIERS

Feaures Glass passivated chip junctions High Forward Surge Capability High Speed recovery time for switching mode application Lead free in compliance with EU RoHS 2011/65/EU directive Low Reverse Current

Ultrafast Recovery Planar Diode

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Ultra-Fast Recovery Rectifier Diodes

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丝印代码：U840F；Ultra Fast Rectifiers

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ULTRA FAST RECTIFIERS

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ULTRAFST RECOVERY RECTIFIERS

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DIODE:Fast Recovery (FRD, UFRD)

分立

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T

RF POWER TRANSISTOR NPN SILICON

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ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

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