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MUR810F

Ultra Fast Rectifiers

Features ◇ Low cost ◇ Diffused junction ◇ Glass passivated junction ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with Alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

LUGUANG

鲁光电子

MUR810F

DIODE:Fast Recovery (FRD, UFRD)

分立

FS

MUR810F

超快恢复二极管

MCC

MUR810F

丝印代码:U810F;Ultra Fast Rectifiers

文件:1.18363 Mbytes Page:2 Pages

LUGUANG

鲁光电子

MUR810F

ULTRA FAST RECTIFIERS

文件:254.97 Kbytes Page:2 Pages

DSK

MUR810F

Ultra-Fast Recovery Rectifier Diodes

文件:167.85 Kbytes Page:2 Pages

YANGJIE

扬杰电子

MUR810F

Ultra-Fast Recovery Rectifier Diodes

文件:164.27 Kbytes Page:2 Pages

YANGJIE

扬杰电子

DIODE:Fast Recovery (FRD, UFRD)

分立

FS

Ultra-Fast Recovery Rectifier Diodes

文件:164.27 Kbytes Page:2 Pages

YANGJIE

扬杰电子

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

3-Pin Microprocessor Reset Monitors

The MAX809 and MAX810 are cost–effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. Features • Precision VCC Monitor for 2.5 V, 3.0 V, 3.3 V, and 5.0 V Supplies • Pre

ONSEMI

安森美半导体

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA • Fla

NEC

瑞萨

MUR810F产品属性

  • 类型

    描述

  • VRM (V):

     100

  • IFSM (A):

     125

  • IF (A):

     8.0

  • VF (V):

     0.95

  • IFM (A):

     8.0

  • TRR (μs):

     0.035

  • IR (μA):

     5.0

  • @VR (V):

     100

  • Package Qty:

     Tube

  • FIT:

     40; Tj=100℃

更新时间:2026-3-16 9:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Micro Commercial Co
25+
ITO-220AC
9350
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