| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MUR6080 | Ultra Fast Recovery Diodes 文件:132.98 Kbytes Page:3 Pages | SIRECT 矽莱克半导体 | ||
MUR6080 | Ultra Fast Recovery Diodes 文件:129.199 Kbytes Page:3 Pages | SIRECTIFIER 矽莱克电子 | ||
MUR6080 | Ultra Fast Recovery Diodes 文件:217.73 Kbytes Page:3 Pages | SIRECTIFIER 矽莱克电子 | ||
MUR6080 | 超快恢复二极管 | SIRECTIFIER 矽莱克电子 | ||
60.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply | THINKISEMI 思祁半导体 | |||
60.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply | THINKISEMI 思祁半导体 | |||
60.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply | THINKISEMI 思祁半导体 | |||
60.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply | THINKISEMI 思祁半导体 | |||
Ultra Fast Recovery Diodes FEATURES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible power supplies (UPS) | SIRECTIFIER 矽莱克电子 | |||
Ultra Fast Recovery Diodes 文件:217.73 Kbytes Page:3 Pages | SIRECTIFIER 矽莱克电子 | |||
超快恢复二极管 | ASEMI 强元芯电子 | |||
Ultra Fast Recovery Diodes 文件:217.59 Kbytes Page:3 Pages | SIRECTIFIER 矽莱克电子 | |||
Ultra Fast Recovery Diodes 文件:136.16 Kbytes Page:3 Pages | SIRECT 矽莱克半导体 | |||
Ultra Fast Recovery Diodes 文件:217.59 Kbytes Page:3 Pages | SIRECTIFIER 矽莱克电子 | |||
UV Power METERS A Wide Lineup of 248 nm, 365 nm and 436 nm Type The C6080 series is a compact UV power meter specifically designed to measure the intensity of UV radiation emitted from the light guide output end of a UV spot light source. The C6080 uses a UV sensor that exhibits stable sensitivity even after | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | |||
Schottky PowerMod ● Schottky barrier rectifier ● Guard ring for reverse protection ● VRRM - 80 to 100 Volts ● High surge capacity ● Reverse energy tested ● Electrically isolated baseplate ● ROHS Compliant | MICROSEMI 美高森美 | |||
DOUBLE HETEROJUNCTION LOW CURRENT DISPLAYS DESCRIPTION This line of solid state LED displays uses newly developed Double Heterojunction (HD) AIGaAs/GaAs material to emit deep red light at 650 nm. This material has outstanding efficiency at low drive currents and can be either DC or pulse driven. Viewability at up to 10 meters (MAN8000 Ser | FAIRCHILD 仙童半导体 | |||
Silicon Schottky Barrier Rectifier Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guard–Ring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche ● Low Power Loss/Hig | NTE | |||
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS 文件:547.62 Kbytes Page:7 Pages | QT |
MUR6080产品属性
- 类型
描述
- IFAV(A):
60
- IFSM(A):
500
- IRRM 25°C(μA):
3000
- IRRM 125°C(μA):
14
- VFMAX(V):
1.8
- IFM(A):
60
- Trr@RG1 CKT(ns):
35
- 封装外形:
TO-247AC
MUR6080规格书下载地址
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DdatasheetPDF页码索引
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