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MUR315S

3.0 APMS. Surface mount Ultrafast Power Rectifiers

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TSC

台湾半导体

MUR315S

Surface Mount Ultrafast Power Rectifiers

文件:203.91 Kbytes Page:5 Pages

TSC

台湾半导体

MUR315S

封装/外壳:DO-214AB,SMC 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GEN PURP 150V 3A DO214AB 分立半导体产品 二极管 - 整流器 - 单

TSC

台湾半导体

MUR315S

25ns, 3A, 150V, Ultra Fast Recovery Rectifier

TSC

台湾半导体

丝印代码:MUR315SB;3A, 50 - 200V Ultra Fast Surface Mount Power Rectifier

FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● Ultra Fast recovery time for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Ada

TSC

台湾半导体

丝印代码:MUR315SB;3A, 50 - 200V Ultra Fast Surface Mount Power Rectifier

FEATURES ● AEC-Q101 qualified ● Glass passivated chip junction ● Ideal for automated placement ● Ultra Fast recovery time for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter

TSC

台湾半导体

封装/外壳:DO-214AB,SMC 包装:卷带(TR) 描述:DIODE GEN PURP 150V 3A DO214AB 分立半导体产品 二极管 - 整流器 - 单

TSC

台湾半导体

25ns, 3A, 150V, Ultra Fast Recovery Rectifier

TSC

台湾半导体

25ns, 3A, 150V, Ultra Fast Recovery Rectifier

TSC

台湾半导体

3A, 50V - 600V Ultra Fast Surface Mount Rectifier

文件:456.02 Kbytes Page:6 Pages

TSC

台湾半导体

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronics

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic

STMICROELECTRONICS

意法半导体

Silicon NPN Transistor, Medium Power Amp

Features: • AF – HF Medium Power Amplifier

NTE

10 mm Seven Segment Display

Description The TDS.31.. series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum

VISHAYVishay Siliconix

威世威世科技公司

MUR315S产品属性

  • 类型

    描述

  • trr (ns):

    25

  • VRRM (V):

    150

  • IF(AV) (A):

    3

  • IFSM (A):

    75

  • Technology:

    GPP

  • IR (µA):

    5

  • VF (V):

    0.875

  • Status:

    Active

  • AEC-Q:

    No

  • TJ Max. (°C):

    175

  • Family:

    Ultra Fast

  • MSL:

    1

更新时间:2021-9-14 10:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TAIWAN
25+
DO-214
6675
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