| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Ultra Fast Recovery Diodes FEATURES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturat | SIRECTIFIER 矽莱克电子 | |||
30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
Ultra Fast Recovery Diodes FEATURES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Rectifiers in switch mode power supplies (SMPS) * Uninterruptible po | SIRECTIFIER 矽莱克电子 | |||
ULTRA FSAT RECTlFIER VOL TAGE RANGE 50 - 600 Volts CURRENT 30 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction , positive centertap • Glass passivated chip junctions • Low power loss • Low forward voltage, high curr | KISEMICONDUCTOR | |||
15A, 100V - 200V Ultrafast Dual Diodes Description MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC, RURH1515CC, RURH1520CC are ultrafast dual diodes (tRR Features • Ultrafast with Soft Recovery Characteristic(tRR | HARRIS | |||
15A, 100V - 200V Ultrafast Dual Diodes Description MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC, RURH1515CC, RURH1520CC are ultrafast dual diodes (tRR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
30.0 AMPS. Super Fast Rectifiers Features Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Glass passivated chip junctions Low power loss, high efficiency Superfast recovery time, high voltage Low forward voltage, high current capability Low th | LUGUANG 鲁光电子 | |||
30A ULTRAFAST RECTIFIER 30A ULTRAFAST RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | |||
30 Amp Super Fast Recovery Rectifier 200 to 600 Volts Features · High Surge Capability · Low Forward Voltage Drop · High Current Capability · Super Fast Switching Speed For High Efficiency | MCC | |||
Ultra Fast Recovery Diodes 文件:216.43 Kbytes Page:3 Pages | SIRECTIFIER 矽莱克电子 | |||
THINKISEMI COMMON ANODE ULTRA FAST RECOVERY RECTIFIER DIODES 文件:139.98 Kbytes Page:1 Pages | THINKISEMI 思祁半导体 | |||
THINKISEMI COMMON CATHODE ULTRA FAST RECOVERY RECTIFIER DIODES 文件:285.48 Kbytes Page:1 Pages | THINKISEMI 思祁半导体 | |||
超快恢复二极管 | JINGDAO 晶导 | |||
THINKISEMI DOUBLER POLARITY ULTRA FAST RECOVERY RECTIFIER DIODES 文件:130.11 Kbytes Page:1 Pages | THINKISEMI 思祁半导体 | |||
超快恢复二极管 | ASEMI 强元芯电子 | |||
30.0 Ampere Heatsink Common Cathode Ultra Fast Recovery Rectifiers 文件:348.01 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers 文件:348 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Doubler Polarity Ultra Fast Recovery Rectifiers 文件:348.01 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers 文件:347.98 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
30.0 Ampere Heatsink Series Connection Ultra Fast Recovery Rectifiers 文件:348.01 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
THINKISEMI TANDEM POLARITY ULTRA FAST RECOVERY RECTIFIER DIODES 文件:130.289 Kbytes Page:1 Pages | THINKISEMI 思祁半导体 | |||
30.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifiers 文件:356.49 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
30.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers 文件:356.52 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
Ultra Fast Recovery Diodes 文件:131.22 Kbytes Page:3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
超快恢复二极管 | ASEMI 强元芯电子 | |||
Switchmode Power Rectifiers 文件:89.34 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
30.0 AMPS. Glass Passivated Super Fast Rectifiers Reverse Voltage 100 to 600 Volts Forward Current 30.0 Amperes 文件:266.72 Kbytes Page:3 Pages | FS | |||
High Surge Capability 文件:1.56132 Mbytes Page:3 Pages | KERSEMI | |||
SINGLE-PHASE SILICON BRIDGE-P.C. MTG 2A, HEAT-SINK MTG 3A(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FEATURES • Surge overload rating—50 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O • Reliable low | PANJIT 強茂 | |||
IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) VOLTAGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Both normal and Pb free product are available : No | PANJIT 強茂 | |||
6-Pin DIP Random-Phase Optoisolators Triac Driver Output 6-Pin DIP Random-Phase Optoisolators Triac Driver Output (250 Volts Peak) The MOC3010 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are designed for applications requiring isolated triac triggering, low–current isolated ac switchin | MOTOROLA 摩托罗拉 | |||
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. • Guaranteed Performance @ 1.6 GHz, 28 Volts Output Power = 10 Watts Minimum Gain = 9.5 dB @ 10 Watts Minimum Efficiency = 45 @ 10 Watts • High Gain, Rugged Device • Bottom Side | MOTOROLA 摩托罗拉 | |||
FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) VOLTAGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MIL-S-19500/228 • Fas | PANJIT 強茂 |
MUR3010产品属性
- 类型
描述
- IFAV(A):
30
- IFSM(A):
200
- IRRM 25°C(μA):
750
- IRRM 125°C(μA):
7
- VFMAX(V):
2
- IFM(A):
36
- Trr@RG1 CKT(ns):
35
- 封装外形:
TO-247AC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
ON/安森美 |
22+ |
TO |
6000 |
十年配单,只做原装 |
|||
IXYS |
26+ |
模块 |
6980 |
原装现货,可开13%税票 |
|||
ON/安森美 |
22+ |
TO |
101009 |
||||
ONSEMI/安森美 |
26+ |
43600 |
全新原装现货,假一赔十 |
||||
ON |
24+ |
2000 |
|||||
ON/安森美 |
23+ |
TO-247 |
16072 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
东芝 |
100 |
原装现货,价格优惠 |
|||||
IR |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
MOTOROLA |
23+ |
模块 |
900 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
MUR3010芯片相关品牌
MUR3010规格书下载地址
MUR3010参数引脚图相关
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MUR3010数据表相关新闻
MUR3020WTG
MUR3020WTG
2023-10-24MUR1520G
MUR1520G
2023-3-16MUR160RLG
MUR160RLG
2022-5-24MUR3060WTG
全新现货 MUR3060WTG MUR3060WT TO-247 30A600V整流二极管
2021-12-28MUR1620CTRT4G全新原装现货
可立即发货
2019-9-24MUR3060WTG原装公司现货销售
MUR3060WTG描述 DIODE ARRAY GP 600V 15A TO247
2019-8-30
DdatasheetPDF页码索引
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