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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MUR20060CT | 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC |   | |
MUR20060CT | HIGH POWER- SUPER FAST RECTIFIERS Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | |
MUR20060CT | Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive | GENESIC | | |
MUR20060CT | Super Fast Recovery Diode, 200A Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching | NAINA | | |
MUR20060CT | Silicon Super Fast Recovery Diode 文件：667.75 Kbytes Page：3 Pages | GENESIC | | |
MUR20060CT | 封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 600V 100A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | |
MUR20060CT | Super Fast Recovery Rectifiers | NAVITAS 纳微半导体 | | |
Super Fast Recovery Diode, 200A Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching | NAINA | | ||
HIGH POWER- SUPER FAST RECTIFIERS Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive | GENESIC | | ||
Super Fast Recovery Rectifiers | NAVITAS 纳微半导体 | | ||
封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 600V 100A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
Silicon Super Fast Recovery Diode 文件：667.75 Kbytes Page：3 Pages | GENESIC | | ||
Fast Recovery Diode FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge APPLICATIONS ■ Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode | DYNEX | | ||
SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward | MOTOROLA 摩托罗拉 | | ||
SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward | MOTOROLA 摩托罗拉 | | ||
RF POWER BROADBAND NPN BIPOLAR 文件：109.9 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | | ||
RF POWER BROADBAND NPN BIPOLAR 文件：109.9 Kbytes Page：10 Pages | MOTOROLA 摩托罗拉 | |
MUR20060CT产品属性
- 类型
描述
- 型号
MUR20060CT
- 功能描述
整流器 SI S-FST RECOV 2TWR 50-600V200A600P/420R
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GY |
22+ |
TO-220-2 |
20000 |
公司只有原装 品质保障 |
|||
MOTOROLA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
DACO |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
24+ |
1900 |
真实现货库存 |
|||||
MCC |
17+ |
TO-220AB |
6200 |
||||
GeneSiC Semiconductor |
22+ |
Twin Tower |
9000 |
原厂渠道,现货配单 |
|||
ONSEMI/安森美 |
26+ |
TO-252 |
43600 |
全新原装现货,假一赔十 |
|||
MCC |
26+ |
TO-220 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
MCC/美微科 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SIRE |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
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MUR20060CT规格书下载地址
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DdatasheetPDF页码索引
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