Ultra Fast Recovery Diodes

FEATURES * International standard package JEDEC TO-263 * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber

Ultra Fast Recovery Diodes

FEATURES * International standard package JEDEC TO-263 * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber

Ultra Fast Recovery Diodes

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超快恢复二极管

Ultra Fast Recovery Diodes

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ULTRAFAST RECTIFIERS 15 AMPERES 200-400-600 VOLTS

SWITCHMODE Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • H

SWITCHMODE Power Rectifiers

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Integrated Circuit Phase Lock Loop (PLL) FM Stereo Multiplex Demodulator

Description: The NTE1560 is an integrated circuit in a 16–Lead DIP type package designed for low voltage radio and cassette tape recorders. Features: • LED Mis–Turning Protection Circuit at Transient Operation Voltage • Provided with Forced Monaural and VCO Stop Circuits • High Pe

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full mold package with 4 circuits • 4 V driving is possible • Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE

DESCRIPTION The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full mold package with 4 circuits • 4 V driving is possible • Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A)