| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MUR1260F | 丝印代码:MUR1260F;Ultra-Fast Recovery Rectifier Diodes Features ● High frequency operation ● High surge forward current capability ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B1 | LUGUANG 鲁光电子 | ||
12.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
12.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
12.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers 文件:279.59 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers 文件:279.59 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers 文件:279.59 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers 文件:279.59 Kbytes Page:2 Pages | THINKISEMI 思祁半导体 | |||
超快恢复二极管 | YJYCOIN 益嘉源 | |||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim | POLYFET | |||
DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated | UNISEM | |||
DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated | UNISEM | |||
DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated | UNISEM | |||
DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated | UNISEM |
MUR1260F产品属性
- 类型
描述
- VRM_Max (V):
600
- Io_Max(A):
12
- IFSM_Max(A):
150
- Rated lo(A):
12
- VF_Max(V):
2.6
- IR@25℃IR(uA):
10
- IR@125℃IR(uA):
200
- Trr_Max(ns):
25
- RθJA(℃/W):
50
- Cj(PF):
92
- Tj(℃):
-55~+175
- Status:
Active
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
轴向 |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
轴向 |
12369 |
样件支持,可原厂排单订货! |
|||
ON/安森美 |
22+ |
AxialLead-2 |
20000 |
公司只有原装 品质保障 |
|||
MOTO |
23+ |
NA |
9966 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
||||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
Onsemi |
17+ |
DO41 |
9800 |
只做全新进口原装,现货库存 |
|||
MOTOROLA |
25+ |
40 |
公司优势库存 热卖中! |
||||
ON |
25+ |
DO-41 |
14000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON |
24+ |
DO-41 |
3000 |
全新原装环保现货 |
MUR1260F规格书下载地址
MUR1260F参数引脚图相关
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MUR1260F数据表相关新闻
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2019-10-30MUR1620CTRT4G全新原装现货
可立即发货
2019-9-24
DdatasheetPDF页码索引
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