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型号 功能描述 生产厂家 企业 LOGO 操作
MUR1260F

丝印代码:MUR1260F;Ultra-Fast Recovery Rectifier Diodes

Features ● High frequency operation ● High surge forward current capability ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B1

LUGUANG

鲁光电子

12.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

12.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

12.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件:279.59 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件:279.59 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件:279.59 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件:279.59 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

超快恢复二极管

YJYCOIN

益嘉源

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

POLYFET

DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR

DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated

UNISEM

DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR

DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated

UNISEM

DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR

DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated

UNISEM

DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR

DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated

UNISEM

MUR1260F产品属性

  • 类型

    描述

  • VRM_Max (V):

    600

  • Io_Max(A):

    12

  • IFSM_Max(A):

    150

  • Rated lo(A):

    12

  • VF_Max(V):

    2.6

  • IR@25℃IR(uA):

    10

  • IR@125℃IR(uA):

    200

  • Trr_Max(ns):

    25

  • RθJA(℃/W):

    50

  • Cj(PF):

    92

  • Tj(℃):

    -55~+175

  • Status:

    Active

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
轴向
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
轴向
12369
样件支持,可原厂排单订货!
ON/安森美
22+
AxialLead-2
20000
公司只有原装 品质保障
MOTO
23+
NA
9966
专做原装正品,假一罚百!
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!
ON
24+
NA
3000
进口原装 假一罚十 现货
Onsemi
17+
DO41
9800
只做全新进口原装,现货库存
MOTOROLA
25+
40
公司优势库存 热卖中!
ON
25+
DO-41
14000
百分百原装正品 真实公司现货库存 本公司只做原装 可
ON
24+
DO-41
3000
全新原装环保现货

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