丝印代码：MUR1240F；Ultra-Fast Recovery Rectifier Diodes

Features ● High frequency operation ● High surge forward current capability ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B1

12.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

12.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

12.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：279.59 Kbytes Page：2 Pages

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：279.59 Kbytes Page：2 Pages

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：279.59 Kbytes Page：2 Pages

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：279.59 Kbytes Page：2 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Electronic two-tone ringer

Description LS1240 is a monolithic integrated circuit designed to replace the mechanical bell in telephone sets in connection with an electro-acoustical converter. It can drive directly a piezoceramic converter (buzzer) or a dynamic loudspeaker. The output current capability of LS1240 is higher

Electronic two-tone ringer

Description LS1240 is a monolithic integrated circuit designed to replace the mechanical bell in telephone sets in connection with an electro-acoustical converter. It can drive directly a piezoceramic converter (buzzer) or a dynamic loudspeaker. The output current capability of LS1240 is higher

ALTERNISTORS

DESCRIPTION The TODV 640 ---> 1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) FEATURES ■ HIGH COMMUTATION :

Photo Modules for PCM Remote Control Systems

Description The TSOP12.. – series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. Features  Photo detector and preamplifier in one package  Internal filter for PCM freq