丝印代码：MUR1220F；Ultra-Fast Recovery Rectifier Diodes

Features ● High frequency operation ● High surge forward current capability ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7 s, per JESD 22-B1

12.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

12.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

12.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

Product Specification

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12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：279.59 Kbytes Page：2 Pages

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：279.59 Kbytes Page：2 Pages

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：279.59 Kbytes Page：2 Pages

12.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：279.59 Kbytes Page：2 Pages

ULTRA FAST RECOVERY RECTIFIER DIODES

DESCRIPTION Low cost single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO220AC and ISOWATT220AC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ■ SUITED FOR

SNUBBERLESS TRIAC

DESCRIPTION The T1020/1030W triacs use high performance glass passivated chip technology,housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppres sion of R-C network, and is suitable for applications such as phase control and static switch on inductive

Silicon NPN Planar RF Transistor

Features • Low power applications • Very low noise figure • High transition frequency fT = 12 GHz • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     For low noise applications such as preamplifiers, mixers and oscillators in analog a

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

10-Bit, 12-Bit Binary Multiplying D/A Converter

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