MUN5113晶体管资料
MUN5113别名：MUN5113三极管、MUN5113晶体管、MUN5113晶体三极管
MUN5113生产厂家：
MUN5113制作材料：Si-P+R
MUN5113性质：表面帖装型 （SMD）
MUN5113封装形式：贴片封装
MUN5113极限工作电压：50V
MUN5113最大电流允许值：0.1A
MUN5113最大工作频率：<1MHZ或未知
MUN5113引脚数：3
MUN5113最大耗散功率：0.4W
MUN5113放大倍数：β>60
MUN5113图片代号：H-15
MUN5113vtest：50
MUN5113htest：999900
- MUN5113atest：0.1
MUN5113wtest：0.4
MUN5113代换 MUN5113用什么型号代替：
MUN5113价格
参考价格：￥0.1609
型号：MUN5113DW1T1G 品牌：ONSemi 备注：这里有MUN5113多少钱，2026年最近7天走势，今日出价，今日竞价，MUN5113批发/采购报价，MUN5113行情走势销售排行榜，MUN5113报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MUN5113 | Bias Resistor Transistor PNP Silicon Dual Bias Resistor Transistor PNP Silicon P/b Lead(Pb)-Free | WEITRON |   | |
MUN5113 | Bias Resistor Transistor Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit | YEASHIN 亚昕科技 | | |
MUN5113 | BIAS RESISTOR TRANSISTOR PNP SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK DESCRIPTION This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two res istors; a series base resistor and a base emi | AITSEMI 创瑞科技 | | |
MUN5113 | PNP 双极数字晶体管 (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT el • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; | ONSEMI 安森美半导体 | | |
MUN5113 | Digital Transistors (BRT) 文件：202.32 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | |
MUN5113 | Digital Transistors (BRT) R1 = 47 k, R2 = 47 kA 文件：113.75 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | |
MUN5113 | Digital Transistors (BRT) R1 = 47 k, R2 = 47 k 文件：148.97 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | |
Dual Bias Resistor Transistor PNP Silicon Dual Bias Resistor Transistor PNP Silicon P/b Lead(Pb)-Free | WEITRON | | ||
Dual Bias Resistor Transistors Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These d | ONSEMI 安森美半导体 | | ||
Dual Bias Resistor Transistors Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These d | ONSEMI 安森美半导体 | | ||
Dual Bias Resistor Transistors Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These | MOTOROLA 摩托罗拉 | | ||
Dual Bias Resistor Transistors Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These | LRC 乐山无线电 | | ||
Dual Bias Resistor Transistors Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a | ONSEMI 安森美半导体 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monoli | MOTOROLA 摩托罗拉 | | ||
Bias Resistor Transistor Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit | LRC 乐山无线电 | | ||
Dual Bias Resistor Transistor 文件：379.35 Kbytes Page：12 Pages | WEITRON | | ||
Dual Bias Resistor Transistors 文件：1.60841 Mbytes Page：12 Pages | YEASHIN 亚昕科技 | | ||
Dual PNP Bias Resistor Transistors 文件：88.68 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors | WILLAS 威伦电子 | | ||
Dual Bias Resistor Transistors 文件：147.75 Kbytes Page：20 Pages | ONSEMI 安森美半导体 | | ||
Dual PNP Bias Resistor Transistors 文件：88.68 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Dual Bias Resistor Transistors 文件：147.75 Kbytes Page：20 Pages | ONSEMI 安森美半导体 | | ||
三极管 | ONSEMI 安森美半导体 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 202MW SC70-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：109.04 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR 文件：238.88 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：132.74 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：109.04 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistors 文件：147.32 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 k 文件：148.97 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：132.74 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：SC-70，SOT-323 包装：剪切带（CT）带盒（TB） 描述：TRANS PREBIAS PNP 50V SC70-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 kA 文件：113.75 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：202.32 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：109.04 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：132.74 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistors 文件：147.32 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
Bias Resistor Transistor 文件：109.04 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 k 文件：148.97 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 47 k, R2 = 47 kA 文件：113.75 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：202.32 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
Micro-power Step-Up DC/DC Converters in SOT23-5 [GMT] General Description The G5113 boost converter is designed for small/medium size LCD panel of high bias voltage. Due to a typical 20µA quiescent current and 2.5V~7V supply voltage range, it is suitable for battery powered portable applications. Such as PDAs and Handheld Computers. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MOS FET Array MOS FET Array | SANKEN 三垦 | | ||
Silicon PNP epitaxial planer transistor Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing | PANASONIC 松下 | | ||
Silicon PNP epitaxial planar type Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing | PANASONIC 松下 | | ||
POWER ZENERS DESCRIPTION Fused-in-glass, metallurgically-bonded 5 watt zeners. FEATURES • 2 Times Greater Surge Rating than Conventional 10 Watt Zeners • Small Physical Size | MICROSEMI 美高森美 | |
MUN5113产品属性
- 类型
描述
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Polarity：
PNP
- IC Continuous (A)：
0.1
- V(BR)CEO Min (V)：
50
- hFE Min：
80
- R1 (kΩ)：
47
- R2 (kΩ)：
47
- R1/R2 Typ：
1
- Vi(off) Max (V)：
0.8
- Vi(on) Min (V)：
3
- Package Type：
SC-70-3/SOT-323-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SC-70 |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON |
2016+ |
SOT363 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
23+ |
SOT23-3 |
20000 |
全新原装假一赔十 |
|||
ON/安森美 |
20+ |
SOT363 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
ON |
24+ |
SOT23-5 |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ONSEMI |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
ONSEMI |
25+ |
N/A |
20000 |
原装 |
|||
ON(安森美) |
23+ |
18479 |
公司只做原装正品,假一赔十 |
||||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
ON/安森美 |
25+ |
SOT-363 |
30000 |
原装正品公司现货,假一赔十! |
MUN5113规格书下载地址
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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