MUN2231晶体管资料
MUN2231别名：MUN2231三极管、MUN2231晶体管、MUN2231晶体三极管
MUN2231生产厂家：
MUN2231制作材料：Si-N+R
MUN2231性质：表面帖装型 （SMD）
MUN2231封装形式：贴片封装
MUN2231极限工作电压：50V
MUN2231最大电流允许值：0.1A
MUN2231最大工作频率：<1MHZ或未知
MUN2231引脚数：3
MUN2231最大耗散功率：0.4W
MUN2231放大倍数：β>35
MUN2231图片代号：H-15
MUN2231vtest：50
MUN2231htest：999900
- MUN2231atest：0.1
MUN2231wtest：0.4
MUN2231代换 MUN2231用什么型号代替：MMUN2231
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MUN2231 | NPN Silicon Bias Resistor Transistor NPN Silicon Bias Resistor Transistor | WEITRON |   | |
MUN2231 | NPN Silicon Surface Mount Transistor Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit | YEASHIN 亚昕科技 | | |
MUN2231 | BIAS RESISTOR TRANSISTOR NPN SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK DESCRIPTION This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating | AITSEMI 创瑞科技 | | |
MUN2231 | NPN 双极数字晶体管 (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT el • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; | ONSEMI 安森美半导体 | | |
MUN2231 | Dual Bias Resistor BJT - 1 | YEASHIN 亚昕科技 | | |
MUN2231 | BIAS RESISTOR TRANSISTORS | AITSEMI 创瑞科技 | | |
MUN2231 | NPN Silicon Bias Resistor Transistor 文件：1.54351 Mbytes Page：10 Pages | WEITRON | | |
MUN2231 | Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k 文件：103.57 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | |
MUN2231 | Digital Transistors (BRT) 文件：102.19 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | |
MUN2231 | NPN SILICON BIAS RESISTOR TRANSISTOR 文件：150.44 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | |
MUN2231 | Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k 文件：127.8 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consi | LRC 乐山无线电 | | ||
NPN SILICON BIAS RESISTOR TRANSISTOR This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The | MOTOROLA 摩托罗拉 | | ||
Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons | LRC 乐山无线电 | | ||
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k 文件：103.57 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：102.19 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
NPN SILICON BIAS RESISTOR TRANSISTOR 文件：150.44 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS NPN 338MW SC59 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS NPN 50V 100MA SC59 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) 文件：102.19 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k 文件：103.57 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k 文件：127.8 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
METAL GATE RF SILICON FET 文件：17.09 Kbytes Page：2 Pages | SEME-LAB | | ||
Advanced LinCMOSE RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS 文件：585.24 Kbytes Page：27 Pages | TI 德州仪器 | | ||
Advanced LinCMOSE RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS 文件：585.24 Kbytes Page：27 Pages | TI 德州仪器 | | ||
Advanced LinCMOSE RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS 文件：585.24 Kbytes Page：27 Pages | TI 德州仪器 | |
MUN2231产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Polarity：
NPN
- IC Continuous (A)：
0.1
- V(BR)CEO Min (V)：
50
- hFE Min：
8
- R1 (kΩ)：
2.2
- R2 (kΩ)：
2.2
- R1/R2 Typ：
1
- Vi(off) Max (V)：
0.5
- Vi(on) Min (V)：
2
- Package Type：
SC-59-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
SC-59 |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON |
22+ |
SOT23 |
20000 |
公司只有原装 品质保障 |
|||
ON/安森美 |
26+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
ON/安森美 |
22+ |
N/A |
93000 |
现货,原厂原装假一罚十! |
|||
24+ |
5000 |
公司存货 |
|||||
ON |
23+ |
SOT23 |
600 |
正规渠道,只有原装! |
|||
ON |
23+ |
SOT23 |
3100 |
原厂原装正品 |
|||
ON |
24+ |
SOT23 |
39500 |
进口原装现货 支持实单价优 |
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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