TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for hi

N?묬hannel Power MOSFET

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TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM

N−Channel Power MOSFET

MOSFET – N-Channel, SUPREMOS 600 V, 25 A, 126 m

Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−re

Fast Switching

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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N-Channel MOSFET

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