iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TMOSPOWERFET75AMPERESRDS(on)=9.5mW50VOLTS

HDTMOSE-FET™PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergy–efficientdesignalsooffersadrain–to–sourcediodewithafastrec

PowerMOSFET75Amps,50Volts

文件：89.23 Kbytes Page：8 Pages

TMOSPOWERFET75AMPERES50VOLTS

HDTMOSE-FET™HighEnegyPowerFETD2PAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponent

FastSwitchingSpeed

文件：58.95 Kbytes Page：2 Pages

iscN-ChannelMOSFETTransistor

文件：280.43 Kbytes Page：2 Pages

N?묬hannelPowerMOSFET

文件：246.16 Kbytes Page：8 Pages