isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS

HDTMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy–efficient design also offers a drain–to–source diode with a fast rec

Power MOSFET 75 Amps, 50 Volts

Power MOSFET 75 Amps, 50 Volts

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TMOS POWER FET 75 AMPERES 50 VOLTS

HDTMOS E-FET™ High Enegy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount component

Fast Switching Speed

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isc N-Channel MOSFET Transistor

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N?묬hannel Power MOSFET

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