N-Channel Power MOSFETs 3.5 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.25A@ TC=25℃ ·Drain Source Voltage -VDSS= 180V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power Mosfets

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N-Channel Power MOSFETs, 3.5A, 150-200V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

Drain Current ID= 2A@ TC=25C

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