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This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls. • Avalanche Energy Specified\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature;

Power MOSFET 29 Amps, 150 Volts N-Channel TO-220

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TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM

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TMOS POWER FET 29 AMPERES 150 VOLTS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low

N?묬hannel Power MOSFET

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