POWER FIELD EFFECT TRANSISTOR

N-Channel Power FET

Power Field Effect Transistor

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Trans MOSFET N-CH Si 200V 40A

N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. General features ■ Gate charge m

N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. General features ■ Gate charge m

N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. General features ■ Gate charge m

200V N-Channel MOSFET

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