isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power Field Effect Transistor

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Trans MOSFET P-CH 20V 3A 3-Pin SMini3-G1 T/R

POWER FIELD EFFECT TRANSISTOR

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applications and D

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

丝印代码：DPAK；isc N-Channel MOSFET Transistor

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TO-252 package design

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