POWER FIELD EFFECT TRANSISTOR

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators converters, solenoid and realy drivers.

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

15A, 200V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 15N20 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N20 is universally applied in low voltage such as automotive, high efficiency

N-Channel MOSFET Transistor

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SMPS MOSFET

文件：239.61 Kbytes Page：10 Pages

N-Channel MOSFET Transistor

文件：335.89 Kbytes Page：2 Pages

SMPS MOSFET

文件：3.78314 Mbytes Page：10 Pages