位置:首页 > IC中文资料第7183页 > MTH15N40
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTH15N40 | N-Channel Enhancement Mode silicon Gate TMOS TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS | MOTOROLA 摩托罗拉 | ||
MTH15N40 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
MTH15N40 | TMOS POWER FETs 15 AMPERES | ETC 知名厂家 | ETC | |
Electrical Characteristics of IGBT General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • H | FAIRCHILD 仙童半导体 | |||
Internally Clamped N-Channel IGBT Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt | ONSEMI 安森美半导体 | |||
Internally Clamped N-Channel IGBT Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt | ONSEMI 安森美半导体 | |||
General Description General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applicati | FAIRCHILD 仙童半导体 | |||
General Description General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applicati | FAIRCHILD 仙童半导体 |
MTH15N40产品属性
- 类型
描述
- 型号
MTH15N40
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
N-Channel Enhancement Mode silicon Gate TMOS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
23+ |
TO-3P |
8560 |
受权代理!全新原装现货特价热卖! |
|||
XP Power |
25+ |
N/A |
12000 |
一级代理保证进口原装正品假一罚十价格合理 |
|||
ON |
26+ |
TO-218 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
METAINK |
23+ |
QFP |
65480 |
||||
MOT |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
METALLINK |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
MOT |
22+ |
TO-218 |
20000 |
公司只做原装 品质保障 |
|||
MOT |
25+ |
TO-218 |
4929 |
||||
ON/安森美 |
22+ |
TO-3P |
100709 |
||||
Metaink |
24+ |
SOP |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
MTH15N40规格书下载地址
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DdatasheetPDF页码索引
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