N-Channel Enhancement Mode silicon Gate TMOS

TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FETs 15 AMPERES

15A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 15N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel MOSFET 400V, 15A, 0.3廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

N-CHANNEL POWER MOSFET

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N-Channel Enhancement Mode MOSFET

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