位置:首页 > IC中文资料第7183页 > MTH15N40
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTH15N40 | N-Channel Enhancement Mode silicon Gate TMOS TMOS POWER FETs 15 AMPERES rDS(on) = 0.3 OHM 350 and 400 VOLTS N-Channel Enhancement Mode silicon Gate TMOS | MOTOROLA 摩托罗拉 | ||
MTH15N40 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
MTH15N40 | TMOS POWER FETs 15 AMPERES | ETC 知名厂家 | ETC | |
Electrical Characteristics of IGBT General Description Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for strobe application Features • High Input Impedance • H | FAIRCHILD 仙童半导体 | |||
Internally Clamped N-Channel IGBT Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt | ONSEMI 安森美半导体 | |||
Internally Clamped N-Channel IGBT Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt | ONSEMI 安森美半导体 | |||
General Description General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applicati | FAIRCHILD 仙童半导体 | |||
General Description General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applicati | FAIRCHILD 仙童半导体 |
MTH15N40产品属性
- 类型
描述
- 型号
MTH15N40
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
N-Channel Enhancement Mode silicon Gate TMOS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
23+ |
TO-3P |
15238 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
XP POWER |
24+ |
电源模块 |
6300 |
原装正品 |
|||
26+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MOT |
23+ |
TO-218 |
6000 |
全新原装正品现货,支持订货 |
|||
MTH |
QFP |
3 |
|||||
METALLINK |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
METALINK |
25+ |
SOP-56 |
573 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-218 |
50000 |
全新原装正品现货,支持订货 |
|||
METAINK |
23+ |
QFP |
7000 |
绝对全新原装!现货!特价!请放心订购! |
|||
METAINK |
24+ |
QFP |
6980 |
原装现货,可开13%税票 |
MTH15N40规格书下载地址
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