TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Sp

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

功率 MOSFET，150V，6A，300mΩ，单 N 沟道，DPAK

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes Page：8 Pages

Power Field Effect Transistor DPAK for Surface Mount

文件：88.65 Kbytes Page：8 Pages

N?묬hannel Enhancement?묺ode Silicon Gate

文件：125.12 Kbytes Page：6 Pages

150V N-Channel MOSFET

Features • 6.4A, 150V, RDS(on) = 0.6Ω @VGS = 10 V • Low gate charge ( typical 6.5 nC) • Low Crss ( typical 9.6 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

150V N-Channel MOSFET

150V N-Channel MOSFET

150V N-Channel MOSFET

Features • 6.4A, 150V, RDS(on) = 0.6Ω @VGS = 10 V • Low gate charge ( typical 6.5 nC) • Low Crss ( typical 9.6 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

150V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.4A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.