型号 功能描述 生产厂家 企业 LOGO 操作
MTD1P50E

TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

MOTOROLA

摩托罗拉

MTD1P50E

TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM

ETC

知名厂家

500V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

FAIRCHILD

仙童半导体

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

FAIRCHILD

仙童半导体

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

MTD1P50E产品属性

  • 类型

    描述

  • 型号

    MTD1P50E

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM

更新时间:2026-3-16 14:28:00
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