位置：首页 > IC中文资料第910页 > MTD14N10E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12A, RDS(ON) = 100mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant RDS(ON) = 140mW @VGS = 6V. | CET-MOS 华瑞 |   | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12A, RDS(ON) = 100mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant RDS(ON) = 140mW @VGS = 6V. | CET-MOS 华瑞 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 14.6mΩ ID 62A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 14.6mΩ ID 40A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 16.5mΩ ID 44A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | |
MTD14N10E产品属性
- 类型
描述
- 型号
MTD14N10E
- 制造商
ON Semiconductor
- 功能描述
MOSFET N D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMC/杰力 |
24+ |
NA/ |
5194 |
原装现货,当天可交货,原型号开票 |
|||
EMC/杰力 |
25+ |
DFN-856 |
1944 |
原装正品,假一罚十! |
|||
EMC |
20+ |
SOP-8 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
EMC |
23+ |
SOP-8 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
EMC |
2450+ |
SOP8 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
EMC |
1533+ |
SOP8 |
392 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
杰力EMC |
22+ |
DFN5x6 |
20000 |
只做原装 |
|||
EMC/杰力 |
25+ |
DFN-85X6 |
1944 |
全新原装正品支持含税 |
|||
EMB |
新年份 |
SOP-8 |
33288 |
原装正品现货,实单带TP来谈! |
|||
EMC |
1728+ |
SOP8 |
8660 |
只做原装进口,假一罚十 |
MTD14N10E规格书下载地址
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