Full-Size (7.3mm or 4.7mm height)

[MMD COMPONENTS] MTA Series / Industry Standard Package • Industry Standard Package • 5.0 or 3.3 Volt • HCMOS, Sinewave, Clipped Sine • 1.000MHz to 1.000GHz • Stability Down to ±1ppm

Full-Size (7.3mm or 4.7mm height)

[MMD COMPONENTS] MTA Series / Industry Standard Package • Industry Standard Package • 5.0 or 3.3 Volt • HCMOS, Sinewave, Clipped Sine • 1.000MHz to 1.000GHz • Stability Down to ±1ppm

Full-Size (7.3mm or 4.7mm height)

[MMD COMPONENTS] MTA Series / Industry Standard Package • Industry Standard Package • 5.0 or 3.3 Volt • HCMOS, Sinewave, Clipped Sine • 1.000MHz to 1.000GHz • Stability Down to ±1ppm

Full-Size (7.3mm or 4.7mm height)

[MMD COMPONENTS] MTA Series / Industry Standard Package • Industry Standard Package • 5.0 or 3.3 Volt • HCMOS, Sinewave, Clipped Sine • 1.000MHz to 1.000GHz • Stability Down to ±1ppm

Silicon NPN RF Power Transistor 50W @ 30MHz

Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency =

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR325CTD series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge ca

Dual Voltage Regulator

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Dual Voltage Regulator

文件：222.23 Kbytes Page：8 Pages

BROADBAND RF POWER TRANSISTOR NPN SILICON

文件：95.63 Kbytes Page：6 Pages