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128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS

GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns • Battery Backup: 2V data retentio

AUSTIN

MT5C1008DCJ-25L/IT产品属性

  • 类型

    描述

  • 型号

    MT5C1008DCJ-25L/IT

  • 制造商

    Micross Components

  • 功能描述

    SRAM, 1MB - Trays

更新时间:2025-10-4 16:30:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ASI
QQ咨询
CSOP
113
全新原装 研究所指定供货商
MT5C1008DJ-15
5
5
ASI
25+
DIP
18000
原厂直接发货进口原装
MICRON
4
全新原装 货期两周
MICRON/美光
24+
SOJ
22055
郑重承诺只做原装进口现货
MIT
24+
SMD
5000
公司存货
14+
原厂封装
210
宇航IC只做原装假一罚十
MICRON
原厂封装
9800
原装进口公司现货假一赔百
ASI
23+
SOJ32
5000
原装正品,假一罚十
MICRON/镁光
23+
SOJ
10880
原装正品,支持实单

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