256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

256K x 4 SRAM SRAM MEMORY ARRAY

文件：103.01 Kbytes Page：13 Pages

256K x 4 SRAM SRAM MEMORY ARRAY

GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using double-layer metal, double-layer polysilicon technology. FEATURES • High Speed: 20, 25, 35, and 45 • Battery Backup: 2V data retention • Low power standby • High-performance,

256K x 4 SRAM SRAM MEMORY ARRAY

文件：103.01 Kbytes Page：13 Pages

256K x 4 SRAM SRAM MEMORY ARRAY

文件：103.01 Kbytes Page：13 Pages

256K x 4 SRAM SRAM MEMORY ARRAY

文件：103.01 Kbytes Page：13 Pages