位置：首页 > IC中文资料第5889页 > MT4LC4M16R6TG-6S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MT4LC4M16R6TG-6S | DRAM GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in | Micron 美光 |   | |
MT4LC4M16R6TG-6S | DRAM 文件：413.1 Kbytes Page：24 Pages | Micron 美光 | | |
DRAM GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in | Micron 美光 | | ||
DRAM 文件：413.1 Kbytes Page：24 Pages | Micron 美光 | |
MT4LC4M16R6TG-6S产品属性
- 类型
描述
- 型号
MT4LC4M16R6TG-6S
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MT |
23+ |
SOJ24 |
20000 |
全新原装假一赔十 |
|||
MT |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
MT |
SOJ24 |
0329+/ |
4245 |
全新原装进口自己库存优势 |
|||
MTC |
23+ |
NA |
128 |
专做原装正品,假一罚百! |
|||
Micron |
25+ |
6 |
公司优势库存 热卖中!! |
||||
MICRON |
新 |
18 |
全新原装 货期两周 |
||||
micron |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
MICRON |
25+ |
TSOP-50 |
4650 |
||||
MCR |
24+ |
180 |
|||||
Micron |
SOJ |
6000 |
优势库存 |
MT4LC4M16R6TG-6S芯片相关品牌
MT4LC4M16R6TG-6S规格书下载地址
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DdatasheetPDF页码索引
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