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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MT4C4001 | standard or self refresh GENERAL DESCRIPTION The MT4C4001J(S) is a randomly accessed solid=state memory containing 4,194,304 bits organized in ax4 configuration. | Micron 美光 |   | |
MT4C4001 | standard or self refresh | Micron 美光 | | |
1MEG x 4DRAM GENERAL DESCRIPTION The MT4C4001J(S) is a randomly accessed solid=state memory containing 4,194,304 bits organized in ax4 configuration. | Micron 美光 | | ||
standard or self refresh GENERAL DESCRIPTION The MT4C4001J(S) is a randomly accessed solid=state memory containing 4,194,304 bits organized in ax4 configuration. | Micron 美光 | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
FAST PAGE MODE access cycle GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. FEATURES • Industry standard x4 pinout, timing, functions, and packages • High-performance, CMOS silicon-gate process • Single +5V±10 power supply | MICROSS | | ||
standard or self refresh GENERAL DESCRIPTION The MT4C4001J(S) is a randomly accessed solid=state memory containing 4,194,304 bits organized in ax4 configuration. | Micron 美光 | | ||
standard or self refresh GENERAL DESCRIPTION The MT4C4001J(S) is a randomly accessed solid=state memory containing 4,194,304 bits organized in ax4 configuration. | Micron 美光 | | ||
standard or self refresh GENERAL DESCRIPTION The MT4C4001J(S) is a randomly accessed solid=state memory containing 4,194,304 bits organized in ax4 configuration. | Micron 美光 | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | | ||
1 MEG x 4 DRAM Fast Page Mode DRAM GENERAL DESCRIPTION The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration. During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time. RAS is used to latch the fir | AUSTIN | |
MT4C4001产品属性
- 类型
描述
- 型号
MT4C4001
- 制造商
MICRON
- 制造商全称
Micron Technology
- 功能描述
standard or self refresh
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIC |
23+ |
NA |
661 |
专做原装正品,假一罚百! |
|||
MT |
23+ |
SOJ |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
MITEL |
2450+ |
PLCC |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ASI |
QQ咨询 |
ZIP |
118 |
全新原装 研究所指定供货商 |
|||
MT |
25+ |
20 |
公司优势库存 热卖中!! |
||||
MIT |
25+ |
SOP14 |
18000 |
原厂直接发货进口原装 |
|||
24+ |
SOJ20 |
35210 |
一级代理/放心采购 |
||||
MICRON |
新 |
542 |
全新原装 货期两周 |
||||
MICRON/美光 |
24+ |
SOJ20 |
37279 |
郑重承诺只做原装进口现货 |
|||
MICRON/美光 |
2023+ |
SOJ20 |
1149 |
一级代理优势现货,全新正品直营店 |
MT4C4001规格书下载地址
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