TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz) • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

VHF-UHF Band Low Noise Amplifier Application

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MT6L57AE

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VHF~UHF Band Low Noise Amplifier Applications

文件：108.78 Kbytes Page：3 Pages

VHF~UHF Band Low Noise Amplifier Applications

文件：108.78 Kbytes Page：3 Pages

Diode Network / ESD Suppressor

Feature This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand overshoot. The network has the added benefit of acting to suppress any ESD voltage events by shunting the energy to ground assu

Diode Network / ESD Suppressor

Voltage: 8 Volts Current: 50 mA Feature This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and overshoot. The network has the added benefit of acting to suppress any ESD voltage events b