FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

FLASH MEMORY

GENERAL DESCRIPTION The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a

封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR） 描述：IC FLASH 8MBIT PARALLEL 48TSOP I 集成电路（IC） 存储器

封装/外壳：48-TFSOP（0.724"，18.40mm 宽） 包装：卷带（TR） 描述：IC FLASH 8MBIT PARALLEL 48TSOP I 集成电路（IC） 存储器