位置：首页 > IC中文资料 > MT25QL512ABB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：8-WDFN 裸露焊盘 包装：卷带（TR）剪切带（CT） 描述：IC FLASH 512MBIT SPI 8WPDFN 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：24-TBGA 包装：管件 描述：IC FLASH 512MBIT SPI 24TPBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron/镁光 |
21+ |
T-PBGA-24 |
6000 |
原装现货 |
|||
MICRON/美光 |
21+ |
T-PBGA-24 |
90000 |
原装正品现货/订货 价格优惠可开票 |
|||
MICRON.NOR |
21+ |
N/A |
5000 |
只做原装正品 |
|||
MICRON/镁光 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
MICRON |
21+ |
BGA |
1643 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
MICRON/美光 |
23+ |
BGA |
12500 |
全新原装现货,假一赔十 |
|||
MICRON/美光 |
23+ |
T-PBGA-24 |
8610 |
专营TI/德州仪器进口原装深圳公司现货 |
|||
Micron |
1942+ |
N/A |
908 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
micron(镁光) |
1921+ |
T-24-PBGA(6x8) |
3575 |
向鸿仓库现货,优势绝对的原装! |
|||
Micron |
1825+ |
BGA |
6528 |
科恒伟业!只做原装正品假一赔十! |
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- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- MT30420
- MT30410
- MT30330
- MT30320
- MT30310
- MT30230
- MT30220
- MT30210
- MT30200
- MT-2C
- MT-2B
- MT-2A
- MT28800
- MT263-Y
- MT263-O
- MT263-G
- MT26310
- MT26300
- MT263
- MT26010
- MT25QL512ABB1EW7-0AITES
- MT25QL512ABB1ESF-0SITES
- MT25QL512ABB1ESF-0SATES
- MT25QL512ABB1ESF-0AITES
- MT25QL512ABB1ESF-0AATES
- MT25QL512ABB1ESE-0SITES
- MT25QL512ABB1ESE-0SATES
- MT25QL512ABB1ESE-0AITES
- MT25QL512ABB1ESC-0SITES
- MT25QL512ABB1ESC-0SATES
- MT25QL512ABB1ESC-0AITES
- MT25QL512ABB1E5X-0SITES
- MT25QL512ABB1E5X-0SATES
- MT25QL512ABB1E5X-0AITES
- MT25QL512ABB1E14-0SITES
- MT25QL512ABB1E14-0SATES
- MT25QL512ABB1E14-0AITES
- MT25QL512ABB1E12-0SITES
- MT25QL512ABB1E12-0SATES
- MT25QL512ABB1E12-0AITES
- MT25QL512ABA8EW9-0SITES
- MT25QL512ABA8EW9-0SATES
- MT25QL512ABA8EW9-0AITES
- MT25QL512ABA8EW7-0SITES
- MT25QL512ABA8EW7-0SATES
- MT25QL512ABA8EW7-0AITES
- MT25QL512ABA8ESF-0SITES
- MT25QL512ABA8ESF-0SATES
- MT25QL512ABA8ESF-0AITES
- MT25QL512ABA8ESE-0SITES
- MT25QL512ABA8ESE-0SATES
- MT25QL512ABA8ESE-0AITES
- MT25QL512ABA8ESC-0SITES
- MT25QL512ABA8ESC-0SATES
- MT25QL512ABA8ESC-0AITES
- MT25QL512ABA8E5X-0SITES
- MT25QL512ABA8E5X-0SATES
- MT25QL512ABA8E5X-0AITES
- MT25QL512ABA8E14-0SITES
- MT25QL512ABA8E14-0SATES
- MT25310
- MT25300
- MT2518W
- MT2516W
- MT2516A
- MT2516
- MT2514W
- MT2514A
- MT2514
- MT2512W
- MT2512A
- MT2512
- MT2510W
- MT2510A
- MT2510
- MT2508W
- MT2508A
- MT2508
- MT2506W
- MT2506A
MT25QL512ABB数据表相关新闻
MT25QL256ABA8ESF-0SIT
进口代理
2022-8-6MT25QL512ABB1EW9-0SIT
MT25QL512ABB1EW9-0SIT存储ICMicron(镁光)封装UFDFN-8
2022-7-16MT25QL512ABB1EW9-0SIT NOR闪存 存储IC芯片-宗天技术
MT25QL512ABB1EW9-0SIT
2022-5-13MT25QL512ABBESA-0AAT
本公司销售原装正品价格优惠欢迎订购
2021-9-28MT25QL256ABA8ESF-0AAT 进口原装现货价格优惠
本公司销售原装正品价格优惠欢迎订购
2021-9-28MT25QL256ABA8E12-0AAT MICRON/镁光 产品规格参数 最新采购价格 全网最低采购价
深圳市明嘉莱科技有限公司只做原装正品现货电话13682413964QQ466792116
2021-7-8
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