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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MicronSerialNORFlashMemory 文件：1.03828 Mbytes Page：97 Pages | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
3V,MultipleI/O,4KB,32KB,64KB,SectorErase 文件：1.03828 Mbytes Page：97 Pages | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：8-WDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC FLASH 256MBIT SPI 8WPDFN 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：8-WDFN 裸露焊盘 包装：托盘 描述：IC FLASH 256MBIT SPI 8WPDFN 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON/镁光 |
23+ |
BGA |
12500 |
专营美光原装现货 |
|||
MICRON/美光 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
MICRON/美光 |
22+ |
SOP16 |
6000 |
||||
美国MICRON |
2021+ |
WPDFN-8 |
2000 |
||||
micron(镁光) |
2021+ |
W-PDFN-8 |
499 |
||||
MICRON |
22+ |
SOP16 |
120 |
||||
MICRON/美光 |
23+24 |
NA |
9842 |
主营MICRON/美光存储IC,原装正品现货 |
|||
Micron/镁光 |
23+ |
T-PBGA-24 |
12700 |
买原装认准中赛美 |
|||
MICRON/镁光 |
22+ |
SOP16 |
8000 |
原装正品,支持实单! |
|||
Micron |
17+ |
6200 |
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- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- MT30420
- MT30410
- MT30330
- MT30320
- MT30310
- MT30230
- MT30220
- MT30210
- MT30200
- MT-2C
- MT-2B
- MT-2A
- MT28800
- MT263-Y
- MT263-O
- MT263-G
- MT26310
- MT26300
- MT263
- MT26010
- MT25QL256ABA1ESF-0SITES
- MT25QL256ABA1ESF-0SATES
- MT25QL256ABA1ESF-0AITES
- MT25QL256ABA1ESF-0AATES
- MT25QL256ABA1ESE-0SITES
- MT25QL256ABA1ESE-0SATES
- MT25QL256ABA1ESE-0AITES
- MT25QL256ABA1ESC-0SITES
- MT25QL256ABA1ESC-0SATES
- MT25QL256ABA1ESC-0AITES
- MT25QL256ABA1E5X-0SITES
- MT25QL256ABA1E5X-0SATES
- MT25QL256ABA1E5X-0AITES
- MT25QL256ABA1E14-0SITES
- MT25QL256ABA1E14-0SATES
- MT25QL256ABA1E14-0AITES
- MT25QL256ABA1E12-0SITES
- MT25QL256ABA1E12-0SATES
- MT25QL256ABA1E12-0AITES
- MT25QL256ABA
- MT25QL256
- MT25QL128CBA1EW9-0SITES
- MT25QL128CBA1EW9-0SATES
- MT25QL128CBA1EW9-0AITES
- MT25QL128CBA1EW7-0SITES
- MT25QL128CBA1EW7-0SATES
- MT25QL128CBA1EW7-0AITES
- MT25QL128CBA1ESF-0SITES
- MT25QL128CBA1ESF-0SATES
- MT25QL128CBA1ESF-0AITES
- MT25QL128CBA1ESE-0SITES
- MT25QL128CBA1ESE-0SATES
- MT25QL128CBA1ESE-0AITES
- MT25QL128CBA1ESC-0SITES
- MT25QL128CBA1ESC-0SATES
- MT25QL128CBA1ESC-0AITES
- MT25QL128CBA1E5X-0SITES
- MT25QL128CBA1E5X-0SATES
- MT25QL128CBA1E5X-0AITES
- MT25QL128CBA1E14-0SITES
- MT25310
- MT25300
- MT2518W
- MT2516W
- MT2516A
- MT2516
- MT2514W
- MT2514A
- MT2514
- MT2512W
- MT2512A
- MT2512
- MT2510W
- MT2510A
- MT2510
- MT2508W
- MT2508A
- MT2508
- MT2506W
- MT2506A
MT25QL256A数据表相关新闻
MT25QL256ABA1EW9-0AAT
MT25QL256ABA1EW9-0AAT
2023-9-6MT25QL128ABA8ESF-0SIT
进口代理
2022-7-20MT25QL256ABA1EW9-0SIT
MT25QL256ABA1EW9-0SIT存储ICMICRON封装WPDFN8
2022-7-16MT25QL256ABA8E12-0AAT 原装现货
支持实单价格优惠原装现货假一罚十
2021-11-25MT25QL128ABA1EW9-0SIT
MT25QL128ABA1EW9-0SIT，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
2021-6-28MT25QL128ABA1ESE-0SIT坚持每一片芯片都来自原厂及授权渠道,自营库存.大陆现货，货品纯正，质优价宜
MT25QL128ABA1ESE-0SIT坚持每一片芯片都来自原厂及授权渠道,自营库存.大陆现货，货品纯正，质优价宜
2020-7-1
DdatasheetPDF页码索引
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