型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Micron |
23+ |
24TPBGA (6x8) |
9000 |
原装正品,支持实单 |
|||
Micron |
21+ |
24TPBGA (6x8) |
610880 |
本公司只售原装 支持实单 |
|||
MICRON |
22+ |
NA |
2500 |
原装正品支持实单 |
|||
Micron |
21+ |
24TPBGA (6x8) |
13880 |
公司只售原装,支持实单 |
|||
micron(镁光) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
6000 |
|||||||
micron(镁光) |
2335 |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
Micron |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
micron(镁光) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
Micron |
1942+ |
N/A |
908 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
MT25QL02G规格书下载地址
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128MbitSOIC-8SPINOR闪存,SOIC-8NOR闪存,S29GL512N/256N/128NNOR闪存,USON-8QPI,SPINOR闪存,-55CNOR闪存,1.95V1.65VNOR闪存
2020-7-8
DdatasheetPDF页码索引
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