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MT16价格
参考价格：￥250.0000
型号：MT16HTF25664HIZ-667H1 品牌：Micron 备注：这里有MT16多少钱，2025年最近7天走势，今日出价，今日竞价，MT16批发/采购报价，MT16行情走势销售排行榜，MT16报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MODEM Transformer ◆ Product Description • 16.6× 16.6mm Max.(L× W),10.5mm Max. (MT1610C:11.7mm Max.)Height. • Operating frequency: 4MHz Max. ◆ Feature • International safety standard approved for reinforced isolation. • Silicone Steel is used. • Ideally used in set-top box,FAX,MODEM. • V.92(56kbps) to V.32bis | SUMIDA 胜美达 |   | ||
MODEM Transformer ◆ Product Description • 16.6× 16.6mm Max.(L× W),10.5mm Max. (MT1610C:11.7mm Max.)Height. • Operating frequency: 4MHz Max. ◆ Feature • International safety standard approved for reinforced isolation. • Silicone Steel is used. • Ideally used in set-top box,FAX,MODEM. • V.92(56kbps) to V.32bis | SUMIDA 胜美达 | | ||
MODEM Transformer ◆ Product Description • 16.6× 16.6mm Max.(L× W),10.5mm Max. (MT1610C:11.7mm Max.)Height. • Operating frequency: 4MHz Max. ◆ Feature • International safety standard approved for reinforced isolation. • Silicone Steel is used. • Ideally used in set-top box,FAX,MODEM. • V.92(56kbps) to V.32bis | SUMIDA 胜美达 | | ||
Module Rack, Zone 1, for 16 Modules MT16-2G The MT16-2G module rack consists of a backplane, two PS-F24Ex mains filters and the actual rack system. It can accommodate 2 gateways, 2 power supply units as well as 16 I/O modules. Up to 128 binary inputs/outputs or 64 analog inputs/outputs resp. a mix of both can be connected to it. Two PS-F | TURCKTurck, Inc. 图尔克德国图尔克集团公司 | | ||
Module Rack, Zone 1, for 16 Modules, Marine Ship Approved MT16-2G/MSA The module rack MT16-2G/MSA consists of a backplane and the actual rack system. It can accommodate 2 gateways, 2 power supply units as well as 16 I/O modules. Up to 128 binary inputs/outputs or 64 analog inputs/outputs resp. a mix of both can be connected to it. All modules can be plugged and | TURCKTurck, Inc. 图尔克德国图尔克集团公司 | | ||
Module Rack, Zone 1, for 16 Modules, Marine Ship Approved MT16-2G/MSA The module rack MT16-2G/MSA consists of a backplane and the actual rack system. It can accommodate 2 gateways, 2 power supply units as well as 16 I/O modules. Up to 128 binary inputs/outputs or 64 analog inputs/outputs resp. a mix of both can be connected to it. All modules can be plugged and | TURCKTurck, Inc. 图尔克德国图尔克集团公司 | | ||
excom I/O System Module Rack for 16 Modules, Zone 2 The module rack MT16-3G consists of a backplane and the actual rack system. It can accommodate 2 gateways, 2 power supply units as well as 16 I/O modules. Up to 128 binary inputs/outputs or 64 analog inputs/outputs resp. a mix of both can be connected to it. All modules can be plugged and unplu | TURCKTurck, Inc. 图尔克德国图尔克集团公司 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
2 MEG x 32 DRAM 1 MEG, 2 MEG x 32 4, 8 MEGABYTE, 5V, FAST PAGE OR DEO PAGE MODE | Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
1 MEG, 2 MEG x 32 DRAM MODULES
| Micron 美光 | | ||
DDR2 SDRAM SODIMM Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 • 2GB (256 Meg x 64) or 4GB (512 Meg x 64) • VDD = VDDQ 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS | Micron 美光 | | ||
DDR2 SDRAM SODIMM Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 • 2GB (256 Meg x 64) or 4GB (512 Meg x 64) • VDD = VDDQ 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS | Micron 美光 | | ||
DDR2 SDRAM SODIMM Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 • 2GB (256 Meg x 64) or 4GB (512 Meg x 64) • VDD = VDDQ 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS | Micron 美光 | | ||
DDR2 SDRAM SODIMM Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 • 2GB (256 Meg x 64) or 4GB (512 Meg x 64) • VDD = VDDQ 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS | Micron 美光 | | ||
DDR2 SDRAM SODIMM Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2-5300 • 2GB (256 Meg x 64) or 4GB (512 Meg x 64) • VDD = VDDQ 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS | Micron 美光 | | ||
8,16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE 8, 16 MEG x 64 SDRAM DIMMs | Micron 美光 | | ||
SYNCHRONOUS DRAM MODULE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of | Micron 美光 | | ||
SYNCHRONOUS DRAM MODULE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of | Micron 美光 | | ||
SYNCHRONOUS DRAM MODULE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of | Micron 美光 | | ||
SYNCHRONOUS DRAM MODULE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of | Micron 美光 | | ||
SYNCHRONOUS DRAM MODULE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of | Micron 美光 | | ||
SYNCHRONOUS DRAM MODULE 256MB / 512MB (x64) 168-PIN SDRAM DIMMs Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of | Micron 美光 | | ||
8,16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE 8, 16 MEG x 64 SDRAM DIMMs | Micron 美光 | | ||
8,16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE 8, 16 MEG x 64 SDRAM DIMMs | Micron 美光 | | ||
8,16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE 8, 16 MEG x 64 SDRAM DIMMs | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
SMALL-OUTLINE DDR SDRAM DIMM General Description The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices. Features • 200-pin, small-outline, dual in-line memory module (SODIM | Micron 美光 | | ||
包装：散装 描述：INVERTER 8.5KVA 5.5KW 线路保护，配电，备用 DC 到 AC（电源）逆变器 | ETC 知名厂家 | ETC | | |
包装：散装 描述：INVERTER 11KVA 7.5KW 线路保护，配电，备用 DC 到 AC（电源）逆变器 | ETC 知名厂家 | ETC | | |
Low Impedance Chip Ferrite Beads 文件：661.35 Kbytes Page：5 Pages | Bourns 伯恩斯 | |
MT16产品属性
- 类型
描述
- 型号
MT16
- 功能描述
接线端子工具和配件
- RoHS
否
- 制造商
Phoenix Contact
- 产品
Tools & Accessories
- 类型
End Bracket
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON/美光 |
24+ |
NA |
20000 |
美光专营原装正品 |
|||
MICRON |
NA |
999999 |
全新原装正品 一级代理假一罚十 长期有货 |
||||
MICRON |
23+ |
BGA |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
MICRON |
2016+ |
BGA |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
EDO |
23+ |
12004 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
MICRON |
25+ |
BGA |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
edo |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
Micron |
17+ |
6200 |
|||||
Micron |
25+ |
50000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
MICRON/美光 |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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DdatasheetPDF页码索引
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