1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM514400E/EL is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514400E/EL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer

1,048,576-WORD x 4-BIT DYNAMIC RAM

1,048,576-WORD x 4-BIT DYNAMIC RAM

1,048,576-word X 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/B

1,048,576-word X 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/B

1,048,576-word X 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/B

1,048,576-word X 4-bit Dynamic Random Access Memory

The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance and various functions by employing 0.8 µm CMOS process technology and some new CMOS circuit design technologies. The HM514400B/B