型号 功能描述 生产厂家&企业 LOGO 操作
MSM514260E

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI
MSM514260E

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI
MSM514260E

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-WordX16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260E/ESLisa262,144-word×16-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM514260E/ESLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layer

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260C/CSLisa262,144-wordx16-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM514260C/CSLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layerme

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514260C/CSLisa262,144-wordx16-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM514260C/CSLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layerme

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

262,144-Wordx16-BitDynamicRandomAccessMemory

文件:1.20724 Mbytes Page:21 Pages

HitachiHitachi Semiconductor

日立日立公司

Hitachi

262,144-wordx16-bitDynamicRandomAccessMemory

文件:260.779 Kbytes Page:27 Pages

HitachiHitachi Semiconductor

日立日立公司

Hitachi

MSM514260E产品属性

  • 类型

    描述

  • 型号

    MSM514260E

  • 制造商

    OKI

  • 制造商全称

    OKI electronic componets

  • 功能描述

    262,144-Word x 16-Bit DYNAMIC RAM

  • FAST PAGE MODE TYPE

更新时间:2025-6-26 23:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
OKI
24+
SOJ
34564
只做原装 公司现货库存
OKI
24+
NA/
483
优势代理渠道,原装正品,可全系列订货开增值税票
OKI
2016+
TSOP44
9000
只做原装,假一罚十,公司可开17%增值税发票!
OKI
23+
SOP40
20000
全新原装假一赔十
OKI
25+
SOJ
996880
只做原装,欢迎来电资询
OKI
2017+
SMD
1585
只做原装正品假一赔十!
OKI
20+
TSSOP-40
2960
诚信交易大量库存现货
OKI
23+
SOP
20000
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全
OKI
23+
TSOP44
12000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
OKI
TSOP44
53650
一级代理 原装正品假一罚十价格优势长期供货

MSM514260E芯片相关品牌

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  • MSYSTEM
  • SSDI
  • WTE

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