DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER

DESCRIPTION: The MSK 182, 183, 184 and 185 are dual high power monolithic operational amplifiers ideal for use with a wide variety of loads. With operation from either single or dual supplies, they offer excellent design flexibility. Power dissipation is kept to a minimum with a quiescent current

DUAL HIGH VOLTAGE

文件：237.43 Kbytes Page：9 Pages

DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER

DESCRIPTION: The MSK 182, 183, 184 and 185 are dual high power monolithic operational amplifiers ideal for use with a wide variety of loads. With operation from either single or dual supplies, they offer excellent design flexibility. Power dissipation is kept to a minimum with a quiescent current

DUAL HIGH VOLTAGE

文件：237.43 Kbytes Page：9 Pages

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA