SiGe HBT type For low-noise RF amplifier

SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages

SiGe HBT type For low-noise RF amplifier

Aluminum electrolytic capacitors

Long-life grade capacitors Features ■ Miniaturized dimensions ■ RoHS-compatible ■ Load life of 2000 hours at 85 °C Applications ■ For low impedance applications ■ Semi-professional to professional application range ■ For filtering, coupling and pulse circuits Construction ■ Radial leads

Silicon Step Recovery Diodes

Description and Applications The MA44600 series of Step Recovery diodes is designed for use in low and moderate power multipliers with output frequencies of up to 20 GHz. These Step Recovery diodes generate harmonics by storing a charge as the diode is driven to forward conductance by the positiv

Step Recovery Diodes

Description The MA44600 series of Step Recovery diodes is designed for use in low and moderate power multipliers with output frequencies of up to 20 GHz. These Step Recovery diodes generate harmonics by storing a charge as the diode is driven to forward conductance by the positive voltage of the

Silicon Step Recovery Diodes

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