Low VF Schottky Barrier Diode

Low VF Schottky Barrier Diode(20V~40V / 1.0A) FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage * Low power loss, High efficiency * High current capability * Low forward voltage drop * Plastic package has Underwriters Laboratory Flammability

Low VF Schottky Barrier Diode

Low VF Schottky Barrier Diode(20V~40V / 1.0A) FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage * Low power loss, High efficiency * High current capability * Low forward voltage drop * Plastic package has Underwriters Laboratory Flammability

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 8.0 Twists/foot (m

104/204 In-Line Threaded Diaphragm Seal

FEATURES „ 316L stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging; ideal for viscous media, slurries and emulsions „ Large 21/2˝ diaphragm compatib

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

Smooth, high torque, roller ratchet handle

文件：254.3 Kbytes Page：3 Pages